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| 2SC458(K) Silicon NPN Epitaxial Application * Low frequency amplifier * Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (K) Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 30 5 100 -100 200 150 -55 to +150 Unit V V V mA mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 5 -- -- 1 Typ -- -- -- -- -- -- -- -- -- -- 80 300 260 Max -- -- -- 0.5 1.0 500 0.4 1.0 -- 4 -- -- -- Unit V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 4 V, IC = 0 VCE = 1 V, IC = 10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time Turn off time Storage time Note: B 100 to 200 V(BR)EBO I CBO I EBO hFE* 100 -- -- 100 -- -- -- -- VCE(sat) VBE(sat) fT Cob t on t off t stg V V MHz pF ns ns ns I C = 10 mA, IB = 1 mA I C = 10 mA, IB = 1 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz I C = 10 IB1 = -10 IB2 = 10 mA, VCC = 10 V I C = IB1 = -IB2 = 20 mA, VCC = 5 V 1. The 2SC458 (K) is grouped by hFE as follows. C 160 to 320 D 250 to 500 2 2SC458 (K) Small Signal h Parameters Item Input impedance Voltage feedback ratio Current transfer ratio Output admittance Symbol hie hre hfe hoe Typ 16.5 70 130 11 S Unit k x 10 -6 Test conditions VCE = 5 V, IC = 0.1 mA, f = 270 Hz Switching Time Test Circuit ton, toff Test Circuit Switching Time Test Circuit tstg Test Circuit 6k P.G. tr, tf < 20 ns = PW > 2 s = 6k D.U.T 0.005 0.005 CRT 1k P.G. tr < 10 ns = PW > 1 s = D.U.T 0.5 220 100 200 7V 0.002 0.002 CRT 240 50 -6 V -+ 50 -+ 50 10 V Unit R: C:F -+ 50 -+ 50 5V Unit R: C:F Response Waveform 13 V Input 0 90% Output 10% ton toff Response Waveform 0 Input -9 V Output 10% tstg 10% IC 10 mA IB1 1 mA IB2 -1 mA VCC 10 V VBB -6 V Vin 13 V IC IB1 IB2 VCC 5V VBB 7V Vin -9 V 20 mA 20 mA -20 mA 3 2SC458 (K) Collector Cutoff Current vs. Collector to Base Voltage Maximum Collector Dissipation Curve Collector power dissipation PC (mW) Collector cutoff current ICBO (nA) 250 200 150 100 50 100 30 10 3 1.0 0.3 0.1 0.03 0 50 100 Ambient Tmperature Ta (C) 150 0 5 10 15 20 25 30 Collector to Base Voltage VCB (V) Ta = 25C 75 125 100 50 Typical Output Characteristics (1) 100 Collector Current IC (mA) 2.0 .8 1 .6 1 1.4 1.2 1.0 0.8 0.6 0.4 Typical Output Characteristics (2) 2.0 14 12 10 Collector Current IC (mA) 80 1.8 60 1.2 8 6 0.8 4 40 0.2 20 0.1 mA 0.4 IB = 0 0 1.6 0.4 0.8 1.2 2.0 Collector to Emitter Voltage VCE (V) 0 2 1 A IB = 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V) 4 2SC458 (K) Collector to Emitter Saturation Voltage vs. Base Current Collector to Emitter Saturation Voltage VCE(sat) (V) 1.0 DC Current Transfer Ratio hFE 240 200 160 120 80 40 0 0.5 DC Current Transfer Ratio vs. Collector Current 0.8 0.6 0.4 00C Ta = 1 75 50 25 0 -25 -50 VCE = 1 V IC = 5 mA 0.2 0 0.02 0.05 0.1 0.2 0.5 1.0 2 Base Current IB (mA) 100 10 20 50 5 10 20 1.0 2 5 10 20 Collector Current IC (mA) 50 100 Base to Emitter Saturation Voltage VBE (sat) (V) Base to Emitter Saturation Voltage vs. Collector Current IC = 10 IB -25 25 C Ta = 75 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 1 2 5 10 20 50 100 Collector Current IC (mA) Ta = 25C -50 IC = 10 IB 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 5 10 20 50 Collector Current IC (mA) 100 5 2SC458 (K) Gain Bandwidth Product vs. Collector Current 500 Gain Bandwidth Product fT (MHz) VCE = 10 V Input and Output Capacitance vs. Voltage Collector output Capacitance Cob (pF) Emitter Input Capacitance Cib (pF) 8 7 f = 1 MHz 400 C ib 6 5 (I C = 0) 300 C 4 3 2 0.3 ob 200 (I E =0 ) 100 0 0.5 1.0 2 5 10 Collector Current IC (mA) 20 1.0 3 10 30 Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V) Switching Time vs. Collector Current VCC = 10.3 V IC = 10 IB1 = -10 IB2 toff tstg ton td Percentage of Relative to IC = 0.1 mA 1.0 0.5 Switching Time t (s) 100 50 20 10 5 h Parameter vs. Collector Current VCE = 6 V f = 270 Hz hie hre hfe 0.2 0.1 0.05 2h re 1.0 hfe 0.5 hoe 0.2 0.1 0.05 hie hie 0.02 0.01 1 2 5 10 20 50 Collector Current IC (mA) 100 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 10 Collector Current (mA) 6 2SC458 (K) h Parameter vs. Collector to Emitter Voltage 1.8 Percentage of Relative to VCE = 5 V IC = 0.1mA f = 270 Hz 1.6 hre 1.4 hoe 1.2 hoe 1.0 hfe hie hre hfe hie 0.8 0.5 1.0 2 5 10 20 Collector to Emitter Voltage VCE (V) 7 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.5 0.1 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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